HIGH-LUMINANCE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

A red-color high-luminance light-emitting diode that eliminates defects caused by high Vf while exhibiting excellent life performance and high luminance, as well as a manufacturing method for the high-luminance light-emitting diode that assures stable manufacturing of the high-luminance light-emitting diode with improved yield and productivity. The high-luminance light-emitting diode has an AlGaInP 4-element luminescent layer that is made grown on a GaAs substrate, a p-type window layer for taking out luminescent light that is made grown on the top surface of the AlGaInP 4-element luminescent layer, and an n-type GaP window layer for taking out luminescent light that is made grown in a vapor phase epitaxial method on the rear side that is lattice-matched to GaAs on the AlGaInP 4-element luminescent layer after etching removal of the GaAs substrate. The n-type carrier density in early phase of growth of the n-type GaP window layer is increased, and then the n-type carrier density of the n-type GaP window layer after early phase of growth of the n-type GaP window layer is made lower than the n-type carrier density in early phase of growth of the n-type GaP window layer.