METHOD OF FABRICATING GE NANOWIRE

摘要

A manufacturing method of silicon-germanium nano wire is provided to have a high component content of pure germanium nano wire or germanium by controlling oxidation time etc. under a proper oxidation condition and exhausting silicon of the silicon-germanium nano wire. A manufacturing method of silicon-germanium nano wire(30) of which a component content of pure germanium nano wire or germanium is high comprises steps of: (a) providing the nano wire(10) consisting of silicon-germanium; (b) putting the nano wire under an oxidizing atmosphere and forming a silicon oxide film(20) on the nano wire; and (c) removing the silicon oxide film formed at the step (b). In the step (b), a silicone concentration of the silicon-germanium nano wire is controlled by controlling oxidation time and growing a silicon oxide film.