| 摘要 |
<p>A method for forming pattern of semiconductor device is provided to form a micro pattern by using a second sub-film, and to simplify patterning process by forming a laminated film with a simple spin coating method instead of a deposition method. A first sub-film is formed on a semiconductor substrate(100) on which an etching object film(102) is formed. A sub-pattern is formed by patterning the first sub-film. A second sub-film(110) is formed on the etching object film between a side wall of the sub-pattern and the sub-pattern. The sub-pattern between the second sub-films is removed. A target pattern is formed by etching the etching object films. The first sub-film is an SOC(Spin On Carbon) film.</p> |
