| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for exhibiting high Vsus resistance and achieving sufficiently low on resistance even when a cell is fully refined in the semiconductor device of a trench gate structure especially, and to provide a manufacturing method thereof. SOLUTION: In a first conductivity type first semiconductor layer, a second conductivity type second semiconductor layer and a first conductivity type third semiconductor layer successively formed on the main surface of a first conductivity type semiconductor substrate, isotropic etching processing is performed through a mask to the third semiconductor layer, a plurality of contact trenches whose cross section in the vertical direction is an elliptic shape are formed in the thickness direction of the third semiconductor layer between gate trenches, and a second conductivity type impurity region is positioned below the plane level of the opening of the contact trenches and formed. Then, the plurality of contact trenches are buried and a first electrode is formed so as to come into contact with the impurity region. COPYRIGHT: (C)2009,JPO&INPIT
|
