发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
One embodiment generally described herein can be characterized as a semiconductor device. The semiconductor device can include a first transistor on a semiconductor substrate. A first interlayer insulating layer may be disposed over the first transistor and includes a first recess region. A single-crystalline semiconductor pattern may be disposed in the first recess region. A single-crystalline semiconductor plug may connect the semiconductor substrate to the single-crystalline semiconductor pattern. A second transistor may be disposed on the single-crystalline semiconductor pattern.
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申请公布号 |
US2009020816(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20080175364 |
申请日期 |
2008.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO WOO-JIN;LEE YONG-WOO;HWANG JAE-SEUNG;KWON SUNG-UN;CHAE MIN-CHUL |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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