| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with less property fluctuation due to diffusion of hydrogen atoms. SOLUTION: The method of manufacturing the semiconductor device includes a process for forming a gate electrode on a semiconductor substrate through a gate insulating film, a process for forming a first silicon nitride film on the semiconductor substrate and the gate electrode, a process for forming a diffusion region on a surface layer of the semiconductor substrate by injecting impurities through the first silicon nitride film with the gate electrode as a mask, and a process for forming a second silicon nitride film on the first silicon nitride film. The first silicon nitride film contains less hydrogen than the second silicon nitride film. COPYRIGHT: (C)2009,JPO&INPIT
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