| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive method of manufacturing a semiconductor substrate with an oxide film and a semiconductor signal crystal layer, which are ultrathin with high thickness uniformity, formed on a surface of a semiconductor single crystal substrate. SOLUTION: The method is for manufacturing the semiconductor substrate having the semiconductor single crystal layer on the oxide film by sequentially forming the oxide film and the semiconductor single crystal layer on the surface of the semiconductor single crystal substrate. The method includes a process for forming the oxide film having an epitaxial relationship with the semiconductor single crystal substrate on the surface of the semiconductor single crystal substrate by contacting an oxidizing solution or its gas with the semiconductor single crystal substrate, and a process for epitaxially growing the semiconductor single crystal layer on the oxide film. COPYRIGHT: (C)2009,JPO&INPIT
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