发明名称 CAPACITOR, METHOD OF MANUFACTURING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A capacitor includes a lower electrode structure which includes a sidewall, an upper surface and a rounded surface between the sidewall and the upper surface. The capacitor further includes a ferroelectric layer pattern disposed on the lower electrode structure, and an upper electrode structure is provided on the ferroelectric layer pattern. The ferroelectric layer pattern is formed on the upper surface, the sidewall and the rounded surface of the lower electrode structure. The effective area between the lower electrode structure and the ferroelectric layer pattern may be increased, and the crystalline structure of the ferroelectric layer pattern may be improved. Accordingly, the capacitor may provide enhanced capacitance and electrical characteristics.
申请公布号 US2009021888(A1) 申请公布日期 2009.01.22
申请号 US20080174390 申请日期 2008.07.16
申请人 JUNG DONG JIN 发明人 JUNG DONG JIN
分类号 H01G4/06;H01G7/06;H01L21/02 主分类号 H01G4/06
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