发明名称 |
METHOD FOR FABRICATING EMBEDDED STATIC RANDOM ACCESS MEMORY |
摘要 |
The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the semiconductor substrate and defining at least a first conductive device area and at least a second conductive device area in the logic area and the memory cell area respectively; forming a patterned mask on the memory cell area and on the second conductive device area in the logic area and exposing the first conductive device area in the logic area; performing a first conductive ion implantation process on the exposed first conductive device area in the logic area; and removing the patterned mask.
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申请公布号 |
US2009023256(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20070779880 |
申请日期 |
2007.07.18 |
申请人 |
LEE TUNG-HSING;KUO CHIEN-LI;HUANG YUN-SAN;SU CHIH-MING;HSU BUO-CHIN |
发明人 |
LEE TUNG-HSING;KUO CHIEN-LI;HUANG YUN-SAN;SU CHIH-MING;HSU BUO-CHIN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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