| 摘要 |
Oxygen is doped in a quantum well active layer. First, an n-type In0.02Ga0.98N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O2 at 20 sccm, and NH3 at 10 slm, on the n-type GaN optical guide layer 405. Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped In0.2Ga0.8N well layer 553 of 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type In0.02Ga0.98N barrier layer 550. A p-type Al0.2Ga0.8N cap layer 407 whose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp)2Mg at 5 sccm and NH3 at 10 slm, on a multi-quantum well structure active layer 420 formed in this way.
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