PROTECTION CIRCUIT, OSCILLATION CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a protection circuit which is high in electrostatic breakdown resistance and is superior in discharge performance. SOLUTION: The protection circuit comprises a PMOS transistor P1, with the drain connected to an external terminal and the gate, the source, and the back gate connected to a power source line 4, and a PMOS transistor P2 with the gate, the source, and the back gate connected to an external terminal 1 and the drain connected to a ground line 5. COPYRIGHT: (C)2009,JPO&INPIT