| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, in which the semiconductor layer is crystallized using a metal catalyst, having a superior electric characteristic by controlling the concentration of a metal catalyst according to the position of the channel region in a semiconductor layer, and to provide a method of fabricating the same and an organic light emitting diode display device including the same. SOLUTION: The thin film transistor includes a substrate, the semiconductor layer crystallized using the metal catalyst, disposed on the substrate and including a channel region and source/drain regions, and a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating film disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and a source/drain electrode electrically connected to the source/drain region of the semiconductor layer, respectively. In the channel region of the semiconductor layer, the metal catalyst is present at a concentration of 6.5×E17 atoms/cm<SP>3</SP>or less within 150Åin the vertical direction from the surface of the semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT |
