| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat spreader capable of imparting high reliability to a semiconductor device since another member is apt to neither decrease in connection strength nor peel, to provide the semiconductor device using the heat spreader, and to provide a manufacturing method of efficiently manufacturing the heat spreader with good reproducibility. SOLUTION: On a connection surface 2 of a base substrate 1 composed of a material including Cu, the heat spreader 4 includes a Ni plating layer 3 having a high Cu region 5 where the content of Cu is≥1% by mass, in a range of≤2μm in the thickness direction from an interface with a base substrate 1, and the content of Cu in a foremost surface 6 is <0.5% by mass, and the adhesion strength is≥90 N/mm<SP>2</SP>. In the semiconductor device, the heat spreader removes heat generated when the semiconductor element is operated. In a manufacturing method, a first plating layer is formed on the connection surface of the base substrate and heat-treated at a temperature of >600°C, and a second plating layer is then formed thereon and heat-treated at a temperature of≤600°C. COPYRIGHT: (C)2009,JPO&INPIT |
