发明名称 NOVEL METHOD FOR MONITORING AND CALIBRATING TEMPERATURE IN SEMICONDUCTOR PROCESSING CHAMBERS
摘要 The present invention provides a non-destructive method for monitoring and calibrating chamber temperature. One embodiment of the present invention provides a method for measuring temperature comprising forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive to thermal exposure, exposing the target film to an environment at a second temperature in a range higher than the first temperature, measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature, and determining the second temperature according to the measured one or more properties.
申请公布号 US2009016406(A1) 申请公布日期 2009.01.15
申请号 US20070775720 申请日期 2007.07.10
申请人 RAVI JALLEPALLY;MAHAJANI MAITREYEE;HUANG YI-CHIAU 发明人 RAVI JALLEPALLY;MAHAJANI MAITREYEE;HUANG YI-CHIAU
分类号 G01K11/00 主分类号 G01K11/00
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