发明名称 |
Memory elements and methods of using the same |
摘要 |
In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of about 3.9 to about 25; and (2) control logic coupled to at least one of the one or more MOSFETs. The control logic is adapted to (a) cause the memory element to operate in a first mode to store data; and (b) cause the memory element to operate in a second mode to change a threshold voltage of at least one of the one or more MOSFETs from an original threshold voltage to a changed threshold voltage such that the changed threshold voltage affects data stored by the memory element when operated in the first mode. Numerous other aspects are provided.
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申请公布号 |
US7477541(B2) |
申请公布日期 |
2009.01.13 |
申请号 |
US20060353493 |
申请日期 |
2006.02.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;BONACCIO ANTHONY R.;MANDELMAN JACK A.;TONTI WILLIAM R.;VENTRONE SEBASTIAN T. |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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