| 摘要 |
An image sensor and manufacturing method thereof are provided to reduce processing step and to block light by forming antiglare gate on photo diode of antiglare area when forming gate of unit pixel at the same time. A light receiving area(A) and an antiglare area(B) are formed on a semiconductor substrate. A photo diode(30) is formed on the light receiving area and the antiglare area. A gate(60) is formed in one side of the photo diode of the receiving area and the antiglare area. An antiglare gate(65) is formed on the photo diode of the antiglare area. A salicide layer(85) is formed on the antiglare gate. An insulation film and a poly silicone layer are deposited on the receiving area and the antiglare area including the photo diode to form a gate and the antiglare gate. The gate is formed in one side of the photo diode by patterning the insulation film and the poly silicone layer. The antiglare gate blocking the photo diode is formed by patterning an insulation film and a poly silicone layer of the antiglare area.
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