Fablication methodes of ohmic contact layer and light emitting device adopting the layer,申请号KR20050041771-传众专利搜索

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发明名称	Fablication methodes of ohmic contact layer and light emitting device adopting the layer
摘要
申请公布号	KR100878433(B1)	申请公布日期	2009.01.13
申请号	KR20050041771	申请日期	2005.05.18
申请人		发明人
分类号	H01L21/28;H01L33/06;H01L33/00;H01L33/12;H01L33/32;H01L33/38;H01L33/42;H01L33/44	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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