| 摘要 |
A poly-silicon thin film transistor array substrate includes a gate line and a gate electrode over a substrate, a semiconductor layer having source/drain regions doped with impurity ions, a data line crossing the gate line, and source/drain electrodes connected to the source/drain regions, and a pixel electrode connected to the drain electrode, wherein the semiconductor layer is poly-silicon except for a amorphous silicon region below the gate line. |
