FLASH MEMORY DEVICES INCLUDING MULTI-LAYER TUNNEL INSULATOR AND METHOD OF FABRICATING THE SAME

摘要

The flash memory devices including multi-layer tunnel insulator and method of fabricating the same are provided to obtain the stable data retention characteristic by forming the multilayer turner insulating layer having various energy band gaps. The lower part tunnel insulating layer(131) is formed on the substrate(110). The top tunnel insulating layer(135) is formed on the lower part tunnel insulating layer. The P-type floating gate(140) is formed on the top tunnel insulating layer. The insulating layer(150) is formed on the P-type floating gate between the gate. The control gate(160) is formed on the insulating layer between the gate. The top tunnel insulating layer is the amorphous oxide film.