| 摘要 |
The method of manufacturing the capacitor in the semiconductor device is provided to improve the electrostatic capacity of capacitor by increasing the surface area of the bottom electrode. The lower electrode conduction film(14A) is formed on the substrate(10). The hard mask containing the silicon is formed on the conduction film for lower electrode. The silicon included in the hard mask is reacted with the oxygen and the silicon to form silicon oxide particle(17). The hard mask is removed. The protrusion is formed in the surface of the conduction film for lower electrode by using the silicon oxide particle as the mask. The silicon oxide particle is removed. The conduction film for lower electrode is patterned and the bottom electrode is formed. The dielectric film and the upper electrode are successively formed on the bottom electrode.
|
