FABRICATION METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE

摘要

The method for manufacturing the non-volatile memory device is provided to improve the reliability of the non-volatile memory device by using the metal silicide layer as the ohmic layer of the vertical cell diode. The semiconductor patterns(132,134) are formed on the substrate. The metal layer is formed in the semiconductor pattern. At least two mixed phase metal silicide layer (136a) is formed by reacting the semiconductor pattern and the metal layer. The substrate in which the mixed phase metal silicide layer is formed is exposed to the etching gas. The second thermal process is performed in about 540°C or about 600°C. The mixed phase metal silicide layer includes the CoSi phase and CoSi2 phase. After he substrate in which the mixed phase metal silicide layer is formed is exposed to the etching gas. The substrate is heat-treated and is transformed from the mixed phase metal silicide layer to the single phase metal silicide layer.