发明名称 |
Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement |
摘要 |
A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
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申请公布号 |
US7473921(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20060448549 |
申请日期 |
2006.06.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAM CHUNG HON;SCHROTT ALEJANDRO GABRIEL |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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