发明名称 |
Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures |
摘要 |
Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including semiconductor memory devices such as phase change semiconductor memory devices. An example method forms a small via structure by forming a conductive layer on a semiconductor substrate. A molding insulating layer is formed on the conductive layer and a via hole is formed through the insulating layer to expose a region of the conductive layer. A first via filling layer is formed and then partially removed to form a partial via plug. The formation and removal of the phase change material layer are then repeated as necessary to form a multilayer plug structure that substantially fills the via hole with the multilayer structure typically exhibiting reduced defects and damage than plug structures prepared by conventional methods.
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申请公布号 |
US7473597(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20050201421 |
申请日期 |
2005.08.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE JANG-EUN;CHO SUNG-LAE;PARK JEONG-HEE |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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