发明名称 |
LDMOS device and method of fabrication |
摘要 |
An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a portion of the substrate between the source and the drain region, such that a planar interface is provided between the insulating layer and a surface of the substrate. An insulating member is then formed on a portion of the insulating layer, and a gate layer is formed over part of the insulating member and the insulating layer. By employing such a structure, it has been found that a flat current path exists which enables the on-resistance to be decreased whilst maintaining a high breakdown voltage.
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申请公布号 |
US7473625(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20050100688 |
申请日期 |
2005.04.07 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIU MU-YI;HSU CHIA-LUN;YANG ICHEN;CHEN KUAN-PO;LU TAO-CHENG |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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