| 摘要 |
Nonvolatile memory devices and related methods of fabricating nonvolatile memory devices are disclosed. A nonvolatile memory device includes a tunnel insulation film on a semiconductor substrate, a charge-trapping layer on the tunnel insulation film, a block insulation film on the charge-trapping layer, and a gate electrode on the blocking insulation film. The blocking insulation film includes a stacked film structure of a high-dielectric film and a barrier insulation film. The high-dielectric film has a first potential barrier relative to the charge-trapping layer. The barrier insulation film has a second potential barrier relative to the charge-trapping layer which is higher than the first potential barrier. The blocking insulation film has a thickness in a range of about 5 Å to about 15 Å.
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