发明名称 Atomic layer epitaxy processed insulation
摘要 In one embodiment the present invention proved for a method for depositing a thin film layer onto a composite tape 16, that comprises depositing at least one thin film layer of physically enhancing material 30 onto at least one portion of the composite tape. The depositing is accomplished by atomic layer epitaxy and the thin film layer is approximately 1-10 molecules thick.
申请公布号 US2009000541(A1) 申请公布日期 2009.01.01
申请号 US20070823768 申请日期 2007.06.28
申请人 SIEMENS POWER GENERATION, INC. 发明人 CONLEY DOUGLAS J.
分类号 C30B25/14 主分类号 C30B25/14
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