发明名称 THERMALLY ENHANCED SEMICONDUCTOR DEVICES
摘要 One embodiment relates to a circuit. In this circuit, a first semiconductor device with a first geometry is associated with a first region of a semiconductor body within a first isolation structure. A second semiconductor device with a geometry that matches the first geometry is associated with a second region of the semiconductor body within a second isolation structure. A member, which spans the semiconductor body between the first region and the second region, thermally couples the first region to the second region while retaining electrical isolation therebetween. Other circuits and methods are also disclosed.
申请公布号 US2009001517(A1) 申请公布日期 2009.01.01
申请号 US20070769470 申请日期 2007.06.27
申请人 SWANSON LELAND SCOTT;HOWARD GREGORY E 发明人 SWANSON LELAND SCOTT;HOWARD GREGORY E.
分类号 H01L27/06;H01L21/02 主分类号 H01L27/06
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