| 摘要 |
A SONOS device and a method of manufacturing the same is provided. A tunnel dielectric layer, a charge trap layer, and a charge blocking layer are formed on a semiconductor substrate, and the charge blocking layer is formed on the charge trap layer such that the charge blocking layer is relatively thicker at regions adjacent to or overlapping the source and the drain and relatively thinner at a region overlapping the channel region. A gate is then formed on the blocking layer.
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