| 摘要 |
The object of the present invention is to provide an electrostatic chuck which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.
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