| 摘要 |
The method of fabricating image sensor is provided to form easily salicide by using a blocking layer as the low-temperature oxide layer which has a high etch rate against the fluorine-containing solution. The method of fabricating an image sensor comprises as follows. A step is for forming the first photo resist pattern(15) which exposes the photodiode formation region of the semiconductor substrate by stacking successively the gate oxidation film(12), and the polysilicon layer(13) and low-temperature oxide(14) on the semiconductor substrate(11), using a mask as the reticle for forming the gate electrode on the low-temperature oxide. A step is for etching selectively the low-temperature oxide and polysilicon layer to expose the gate oxidation film by using the etching mask as the first photo resist pattern. A step is for forming the second photoresist pattern on the region except for the photodiode formation region of substrate. A step is for ion-implanting the dopant on the substrate using the hard mask as the second photoresist pattern. A step is for removing the first and the second photoresist pattern, and the low-temperature oxide.
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