| 摘要 |
A memory cell array of a NAND flash memory device includes memory cells connected to bit lines and word lines. A page buffer unit includes cell program test circuits configured to program data into a selected memory cell or read data from the memory cell. An IO controller includes a program confirm decision circuit for outputting a cell program confirmation signal when a cell is programmed. A voltage providing unit changes a step of a program voltage according to the cell program confirmation signal and provides the program voltage.
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