SOLID STATE IMAGING APPARATUS, MANUFACTURING METHOD THEREOF, AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To simultaneously materialize a sufficient hole accumulation layer and dark current reduction.

SOLUTION: A solid state imaging apparatus 1 includes a light reception unit 12 which performs photoelectric conversion of an incident light. The solid state imaging apparatus 1 has a film 21 formed on a light reception surface 12s of the light reception unit 12 so as to lower the interface potential and a film 22 formed on the film 21 formed lowering the interface potential and having a negative fixed charge. A hole accumulation layer 23 is formed on the side of the light reception surface 12s of the light reception unit 12.

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