| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a trench of a high aspect ratio can be formed, and a damage layer can be removed on the entire trench wall surface. SOLUTION: The method of manufacturing the semiconductor device has a trench forming process of forming a trench with an aspect ratio of 10 or more in a semiconductor substrate containing silicon by anisotropic dry etching, and a removing process of removing the damage layer formed in the semiconductor substrate by the anisotropic dry etching, by isotropic dry etching. In the removing process, using at least two kinds of gas with a first gas containing at least carbon and fluorine, and a second gas consisting of oxygen, temperature of the semiconductor substrate is made into temperature at which the damage layer can be removed on the entire trench wall surface, and the isotropic dry etching is carried out. COPYRIGHT: (C)2009,JPO&INPIT
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