| 摘要 |
A semiconductor memory device including a cylinder hole extended in a thickness direction of an insulating film; a capacitor configured from a lower electrode, which is formed on an inner surface of the cylinder hole, and an upper electrode, which is formed on a surface of the lower electrode via a capacitance insulating film; and a capacitance contact plug which is embedded in the insulating film and a portion thereof is exposed inside the cylinder hole so as to be electrically connected with the lower electrode due to the lower electrode covering a surface of this exposed portion, wherein the capacitance contact plug is provided by the portion, which is exposed inside the cylinder hole, being extended from a bottom portion side towards an upper portion side of the cylinder hole.
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