LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

A semiconductor light emitting device and a method of manufacture thereof is provided to improve reproducibility and mass producibility through forming a silica particle layer and etching the silica particle layer with mask. A semiconductor light emitting device(100) comprises a substrate(110), a laminate, and a rough layer. In the laminate, a first conductivity type semiconductor layer(120), a active layer(130), and a second electrical conduction semiconductor layer(140) are successively laminated on the top of the substrate. The rough layer comprises a silica particle layer(150), and a concavo-convex region(160). The concavo-convex region is formed at the lower part of the silica particle layer. A substrate is one among the sapphire substrate, the GaN substrate, the SiC substrate and ZnO substrate.