| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in parasitic inductance during switching operation of a switching device, and also reduced in size and cost. <P>SOLUTION: In this semiconductor device which connects an IGBT11 connected in parallel with a FWD12 and an IGBT13 connected in parallel with a FWD14, in series between a positive electrode 1 and a negative electrode 2 to output power from a connection point between the two IGBTs11 and 13 to an output electrode 3, the positive electrode 1 and an output electrode 3 are placed adjacent to each other, the negative electrode 2 is placed on an upper side of the output electrode 3, external connection points in the positive electrode 1 and the negative electrode 2 are placed in parallel adjacently in the positions facing the external connection point of the output electrode 3, the IGBT11 and FWD12 are placed on the positive electrode 1, and the IGBT13 and the FWD14 are placed on the output electrode 3 located in the position sandwiching the IGBT11, the FWD 12 and the negative electrode 2. <P>COPYRIGHT: (C)2009,JPO&INPIT |
