发明名称 THE METHOD FOR PREPARING ORGANIC THIN FILM TRANSISTOR USING ORGANIC PASSIVATION LAYER WITH ENHANCED WATER-BARRIER PROPERTY
摘要 <p>The method of manufacturing the organic thin film transistor is provided to improve the durability of the organic passivation and the element reliability. The method of manufacturing the organic thin film transistor comprises as follows. A step is for forming the organic passivation at the upper part of the organic layer transistor element. A step is for forming the hydrophobicity self-assembled monolayer on the surface of organic passivation. The organic passivation has -OH and made of water soluble polymer manufactured from monomer more than the first class. The hydrophobicity self-assembled monolayer is made of the compound selected from below chemical formula 1[R-SiX3]. In the equation, R is straight-chain or the branched-chain alkyl group of the C1~C100 which is or not substituted for the fluorine element or X is independently selected from the alkoxy radical of the halogen atom or C1~C5.</p>
申请公布号 KR100873997(B1) 申请公布日期 2008.12.17
申请号 KR20070057025 申请日期 2007.06.12
申请人 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY 发明人 AHN, TAEK;YI, MI HYE;SUK, HYE JUNG
分类号 H01L29/786 主分类号 H01L29/786
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