发明名称 Method for polishing cadmium sulfide semiconductors
摘要 A method for polishing semiconductors, particularly surfaces of CdS. The method is comprised of polishing a substrate with a pad charged with Transene and Cab-O-Sil while an iodine solution is added in small quantities. The last period of polishing is done while flushing the polishing pad with Transene. Upon completion of polishing, the substrate is given an immediate wash with Transene, followed by ultrasonic cleaning in Transene. After the ultrasonic cleaning, the substrate is again rinsed in Transene and then spun dried. The cleaning process is continuous and the cleaning solutions are kept in active contact with the substrate in order to provide a haze-free product.
申请公布号 US4184908(A) 申请公布日期 1980.01.22
申请号 US19780949282 申请日期 1978.10.05
申请人 U S OF AMERICA NAVY SECRETARY 发明人 LACKNER, ANNE M;REIF, PHILLIP G
分类号 H01L21/465;(IPC1-7):H01L21/30 主分类号 H01L21/465
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