| 摘要 |
PURPOSE:To reduce the power consumption and speeding up a semiconductor logic circuit device having switching means and injectors by providing means for interrupting a current flowing in the injector in response to the on or off state of the switching means. CONSTITUTION:An n<+>-type region 22 and a p-type epitaxial layer 24 are sequentially formed on a p-type semiconductor substrate 21, and the region laminate is separated into an island state by oxide films 23 provided at the periphery thereof. Then, n<+>-type collector regions 25 and n-type collector regions 26 are diffused in the layer 24 becoming the island state, and an n-type base region 27 and a p-type emitter region 28 are further formed therein. Thus, a reverse operating npn-transistor becoming a switching element is formed with the regions 22, 24 and 25, and a pnp-transistor becoming an injector and the load of the inverter at the front stage is formed with the regions 27, 26 and 24. Then, a reverse operating npn-transistor is formed with the regions 22, 24 and 28 to invert the signal at the input B and apply the output to the region 26 of the inverter. |
