| 摘要 |
PURPOSE:To obtain high withstand voltage of a semiconductor device while easily manufacturing the device by not disposing the end of a P-N junction forming a semiconductor device in an isolating groove but disposing it on the surface of a substrate, and protecting it with an insulating film. CONSTITUTION:A groove 32 having a deeper depth than that of a base region formed later surround an element forming region is perforated at a P-type Si substrate 31, an N-type impurity is diffused on both front and back surfaces of the substrate 31 to form N<+>-type layers 33 and 33'. Then, the surface is mesa etched to retain the layer 33 only in the center and the groove 32 on the surface surrounded by the groove 32 and to remove the other layer 33, and shallow P<+>-type regions 34, 34' are diffused in the vicinity of the layer 33 at the center in the substrate 31. Thereafter, it is heat treated to diffuse the impurity in the layers 33, 33' and the regions 34, 34', and to surround the substrate 31 surrounded by the groove 32 with an N-type collector region 35 to form an N-type emitter region 36 and a P<+>-type base contact region 39 in the substrate 31 becoming the base. In this manner the junction between the base and the collector is terminated on the surface to protect it with an insulating film 38. |
