| 摘要 |
PURPOSE:To lower the threshold level without increasing the channel width of an N type MOSEFT, by using an inverter no doped with impurity to a channel of a P type MOSFET. CONSTITUTION:A P type impurity is doped to a channel 101 of an N channel MOSFET formed on a P type impurity diffusion region 107, and the P type impurity is not doped to a channel section 201 of a P channel MOSFET. Thus, the threshold voltage of the P channel MOSFET can be decreased, and when it is used for an interface circuit from TTL level to CMOSes, the threshold voltage of the inverter can be lowered to 1.4V taking maximum noise margin, without increasing the channel width of the N channel MOSFET. |
