发明名称 EVALUATING METHOD FOR MOISTURE RESISTANCE OF SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To evaluate the moisture resistance of a semiconductor element by detecting an increase in resistance or the breaking of a wire due to the corrosion of Al wiring formed on the surface of a semiconductor chip installed in a high-temperature, high humidity tank. CONSTITUTION:One terminal of Al wiring 3a formed in parallel on the surface of a chip 1 for evaluation is grounded through the external lead 5 of a resin-sealed element 4 for evaluation, and the other terminal connects with the cathode of a light emitting diode 11 through the external lead 5. One terminal of Al wiring 3b is connected to a power source 10 for bias application through the external lead 5 of said element 4. This power source 10 applies an about 10V DC voltage for accelerating corrosion to the Al wiring 3b. Moisture in a high-temperature, high-humidity tank 8 enters the element 4 and when the Al wiring 3a corrodes, its resistance value increases to cause the breaking of the wiring finally. Therefore, the ceasing of the light emission of the light emitting diode 11 is viewed to evaluate the moisture resistance of the element 4 without taking it out of the tank 8.</p>
申请公布号 JPS57186179(A) 申请公布日期 1982.11.16
申请号 JP19810072569 申请日期 1981.05.12
申请人 MITSUBISHI DENKI KK 发明人 IWAMORI KIYOSHI;MATSUMOTO HEIHACHI;MAKINO HIROTA
分类号 G01R31/26;H01L21/56;H01L21/66;H01L23/28 主分类号 G01R31/26
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