发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To prevent malfunction without losing readout speed, by delaying a readout current flowing to a cell at the transient state reading out the cell of opposite content. CONSTITUTION:A collector of transistors (TR) TR Qg and Qh is connected to a reference power supply line VREF via a load circuit consisting of resistors R1 and R2 and diodes D1 and D2, and a load circuit of the TRQg is connected to the base of a TRQh, and the load circuit of the TRQh is connected to the base of the TRQg respectively. The anode of diodes D3 and D4 is connected to the bit line side between bit lines Bphi and B1 and the emitter of the TRsQg and Qh. At the transient state from a cell C2 having inverting information to a cell C1, since no readout current IR flows to the bit line Bphi, miswriting to the cell C1 can be prevented.
申请公布号 JPS583184(A) 申请公布日期 1983.01.08
申请号 JP19810100516 申请日期 1981.06.30
申请人 FUJITSU KK 发明人 OONO CHIKAU;OOAMI KAZUO
分类号 G11C11/414;G11C7/00;H03K19/091 主分类号 G11C11/414
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