| 摘要 |
PURPOSE:To enable to freely give the necessary electric potential to each terminal in the final process of wirings on a semiconductor integrated circuit by a method wherein the crystallized layer of an amorphous semiconductor is used for the use of the final wiring on the circuit. CONSTITUTION:The crystallized layer of an amorphous semiconductor is used for the use of the final wiring on a semiconductor integrated circuit. As the amorphous semiconductor is used a material whose resistivity is varied as high as six figures or more by the crystallization through a thermal treatment, like a chalcogenide glass of As-Se-Ge. The amorphous semiconductor thin film of this kind is formed on the semiconductor integrated circuit and parts to be needed for wiring are crystallized using laser beam, etc., resulting in enabling to freely perform wirings of low resistance. For example, if the crystallization is performed on the needed part as illustrated by oblique lines in the diagram attached, inputs 5 and 7 can be made into high electric potential by making an inlut 9 into high electric potential and inputs 6 and 8 can be made into low electric potential by making an input 10 into low electric potential. |
