发明名称 PLASMA CVD EQUIPMENT
摘要 PURPOSE:To double the capability of thin film formation and obtain a high quality thin film by a method wherein a substrate electrode heater and a substrate electrode temperature controller are built in a substrate electrode, and the substrate electrode and high voltage electrodes are provided vertically. CONSTITUTION:High voltage electrodes 61 are provided vertically in a vacuum vessel. A transfer mechanism 66 by which a substrate electrode 65 on which substrates 62 are attached is transferred is provided. A substrate electrode heater 63 and a substrate electrode temperature controller 64 are built in the substrate electrode 65. When the electrode 65 is transferred facing the electrodes 61 provided vertically in the vacuum vessel in parallel. Thus, the electrode 65 is heated while being transferred in the vacuum vessel and its temperature is controlled to the prescribed temperature by the substrate electrode temperature controller 64. With this constitution, both sides of the substrate electode can be utilized and the capability of thin film formation is doubled. Even if the thin film adhered to the electrodes 61 or to the inside wall of the vacuum vessel peels off, it does not adhere to the substrates and a high quality thin film can be obtained.
申请公布号 JPS59167012(A) 申请公布日期 1984.09.20
申请号 JP19830040043 申请日期 1983.03.12
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 TOUZONO RIYOUICHI
分类号 H01L31/04;H01L21/205 主分类号 H01L31/04
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