| 摘要 |
<p>PURPOSE:To erase the striation internally pressed on a semiconductor substrate and thus reduce the irregularity of the distribution of specific resistances by using a substrate by a Czochralsky method or floating band purifying method as the semiconductor substrate for the titled device, and then introducing an element of the same conductivity type as the substrate thereinto. CONSTITUTION:A protection oxide film about 500Angstrom thick is adhered on the N<-> type Si substrate containing phosphorus of 1KOMEGAcm, etc., and phosphorus ions are implanted through the film, while setting the acceleration voltage at 100keV and the dosage at 2.0X10<11>/cm<-2>. Next, after annealing at about 900 deg.C for about 30min, diffusion treatment is performed in the atmosphere of N2 kept at 1,200 deg.C for about four hours, thus obtaining the Si substrate whose surface impurity concentration is 8.25X10<14>/cm<-3>. In this manner, the distribution of specific resistances in the substrate is made less than + or -0.1%, and the dispersion of potentials is made only 0.013V. Therefore, the sensitivity of the image pickup device using this substrate remarkably improves.</p> |
