| 摘要 |
PURPOSE:To improve transportation efficiency by a method wherein a base region is formed on a limited narrow region and, on the other hand, a collector region is formed into a lateral constitution wherein the collector region will be positioned nearer to an emitter region than a base electrode region having higher hole density. CONSTITUTION:An insulating layer 4 of SiO2, Si3N4, or the like is formed on an n type Si substrate 3 which works as a collector region. Then, an aperture part 5 is formed on the insulating layer 4, and after a polycrystalline Si layer has been formed, a single crystal layer 2 is grown by fusing the polycrystalline Si layer using a laser irradiation. Ions are implanted into said single crystal layer 2, and a p tpye Si layer is formed. Then, the aperture part 5 and the adjoining regions 1 and 2 are left, and other single crystal layer is removed, Then, an n<+> region 1 is formed into an emitter region, a p-region 2 is formed into a base region, and a p<+> region 2' is formed into a base electrode region by implanting As<+> ions, for example, into the region 1 and B<+> ions are implanted into the region 2. |
