| 摘要 |
PURPOSE:To control a surface reaction at the surface of a sample not to be injected with energy particles at a vacuum etching device by a method wherein the sample is held at a temperature whereat vapor pressure of a reaction product becomes to 1/10 or less of vapor pressure at the room temperature, and the temperature thereof is set to the temperature or more whereat vapor pressure of the reaction product becomes to pressure or more of a vacuum vessel. CONSTITUTION:Particles having energy larger than heat energy is injected continuously or intermittently to a solid sample 8 put in an atmosphere of gas of at least one kind in a vacuum vessel, and the surface of the sample 8 is etched and modified. At this time, the sample 8 is held at the temperature whereat vapor pressure of a reaction product becomes to 1/10 or less of vapor pressure at the room temperature. Moreover the temperature thereof is set to the temperature or more whereat vapor pressure of the reaction product becomes to pressure or more of the vacuum vessel. Accordingly, a surface reaction at the surface not injected with energy particles is controlled with high precision. |
