发明名称 Vorrichtung zur Gewinnung reinen Halbleiter-materials
摘要 In the apparatus according to the parent Specification, for the production of Ge by the thermal decomposition of a gaseous Ge compound which apparatus comprises a heated support in a housing having a mouth closed by a heat screening plate and sealed by a base plate, the heat screening plate has at its side closer to the base plate a polished surface and at its side facing inwardly of the housing a rough surface. The surface of the base plate closer to the heat screening plate may be polished also.ALSO:In the apparatus according to the parent Specification for the production of Si by the thermal decomposition of a gaseous Si compound which apparatus comprises a heated support in a housing having a mouth closed by a heat-screening plate and sealed by a base-plate, the heat screening plate has at its side closer to the base-plate a polished surface and at its side facing inwardly of the housing a rough surface. The surface of the base-plate closer to the heat screening plate may be polished also.
申请公布号 DE1229986(B) 申请公布日期 1966.12.08
申请号 DE1964S092162 申请日期 1964.07.21
申请人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT 发明人 KERSTING ARNO
分类号 C01B33/035;C23C16/44;H01L23/31 主分类号 C01B33/035
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