| 摘要 |
PURPOSE:To reliably separate and partition an impurity region by separating grooves without complicating manufacturing steps with respect to a forming method for the impurity region provided on the surface of a semiconductor substrate. CONSTITUTION:The first resist pattern 5 of a desired impurity region shape is formed on a substrate 1 which includes an insulating film, with the resist as a mask the film 4 is sidewisely etched and removed by isotropically etching, with the resist as a mask an impurity is implanted to provide an impurity region 6, the first resist is then removed, the inverting pattern of the first resist is then formed of the second resist 7, with the remaining insulating film and the second resist 7 as masks the surface of the substrate is etched, a groove 8 surrounding the region 6 is formed, polycrystalline silicon 11 is filled in the groove 8, and the fourth SiO2 film 12 is formed on the polycrystalline silicon 11 by thermal oxidation to coat the upper surface of the groove 8. |
